PECVD tube furnace consists of vacuum acquisition, flow control, and RF power supply.PECVD is obtained by vacuum, flow control, and radio frequency power supply. With 13.56Mhz radio frequency output, the gas containing the atoms of the film is ionized to form a plasma in the vacuum body.
The strong chemical activity of the plasma is used to improve the reaction conditions and make the film composed of The gaseous substance undergoes a chemical reaction to realize a new preparation technology for the growth of thin film materials, and finally, a few pieces of the desired thin film are deposited, which is suitable for the deposition of SiO2 and SiNx thin films at 1200C.